Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/22406
Title: Stability of submicron AlGaN/GaN HEMT devices irradiated by gamma rays
Authors: Jha, S
Jelenkovic, EV
Pejovic, MM
Ristic, GS
Pejovic, M
Tong, KY
Surya, C 
Bello, I
Zhang, WJ
Keywords: AlGaN
Gamma irradiation
GaN
HEMT
Irradiation
Low-frequency noise
Noise
Issue Date: 2009
Publisher: Elsevier
Source: Microelectronic engineering, 2009, v. 86, no. 1, p. 37-40 How to cite?
Journal: Microelectronic engineering 
Abstract: AlGaN/GaN high electron mobility transistors (HEMTs) with 0.75 μm gate-length and incorporated C-doped GaN buffer layers have been exposed to gamma radiation. The devices have been irradiated to cumulative doses up to 10 7 rad. The effect of gamma irradiation on the direct current (DC) and low-frequency noise properties of these devices have been investigated in reference to the unexposed device. The DC and noise characteristics show deteriorating device performance upon the gamma exposure. However, some DC parameters, such as transconductance, tended to recover after the irradiation. The gate leakage current and low-frequency noise power spectra indicate this trend even couple of months after the irradiation.
URI: http://hdl.handle.net/10397/22406
ISSN: 0167-9317
EISSN: 1873-5568
DOI: 10.1016/j.mee.2008.09.001
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