Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/22287
Title: N- and p-Type modulation of ZnO nanomesh coated graphene field effect transistors
Authors: Hui, YY
Tai, G
Sun, Z
Xu, Z
Wang, N
Yan, F 
Lau, SP 
Issue Date: 2012
Publisher: Royal Society of Chemistry
Source: Nanoscale, 2012, v. 4, no. 10, p. 3118-3122 How to cite?
Journal: Nanoscale 
Abstract: Periodic zinc oxide (ZnO) nanomeshes of different thicknesses were deposited on single-layer graphene to form back-gated field effect transistors (GFETs). The GFETs exhibit tunable electronic properties, featuring n- and p-type characteristics by merely controlling the thickness of the ZnO nanomesh layer. Furthermore, the effect of thermal strain on the GFETs from the substrate is suppressed by the ZnO nanomesh, which improves the thermal stability of the GFETs. This nanopatterning technique could modulate the electronic properties of the GFETs effectively.
URI: http://hdl.handle.net/10397/22287
ISSN: 2040-3364
EISSN: 2040-3372
DOI: 10.1039/c2nr30249g
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