Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/22283
Title: Growth and electrical properties of compositionally graded Pb(Zr xTi1-x)O3 thin films on PbZrO3 buffered Pt/Ti/SiO2/Si substrates
Authors: Tang, XG
Wang, J
Chan, HLW 
Ding, AL
Keywords: A1. Characterization
B1. Pb(Zr,Ti)O3
B1. Perovskites
B2. Ferroelectric materials
Issue Date: 2004
Publisher: North-Holland
Source: Journal of crystal growth, 2004, v. 267, no. 1-2, p. 117-122 How to cite?
Journal: Journal of crystal growth 
Abstract: Compositionally graded structure of Pb(ZrxTi1-x) O3 (PZT) thin films with Zr/Ti ratio from 10/90 to 40/60 grown on PbZrO3 buffered Pt/Ti/SiO2/Si substrates were prepared by a simple sol-gel process. The structure, surface morphology and dielectric properties of the graded PZT films were measured by X-ray diffraction, field-emission scanning electron microscopy, Auger electron spectroscopy and by using an impedance analyzer. The results showed that the graded PZT films on PbZrO3 buffered Pt/Ti/SiO2/Si substrates have a preferred (111) orientation. At 100Hz, the dielectric constant and dissipation factor of the graded PZT film are 255 and 0.032, respectively. The pyroelectric coefficient (p) of compositionally graded PZT film was measured by a dynamic technique. At 25°C, the p-value of the graded PZT film is 349μC/m 2K, and the figure of merit of specific detectivity (FD) is 16.4×10-6Pa-0.5 at 100Hz.
URI: http://hdl.handle.net/10397/22283
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2004.03.013
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