Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/22083
Title: Diamond turning of silicon substrates in ductile-regime
Authors: Leung, TP
Lee, WB 
Lu, XM
Keywords: Brittle materials
Critical depth of cut
Diamond turning
Ductile-brittle transition
Silicon single crystal
Issue Date: 1998
Publisher: Elsevier
Source: Journal of materials processing technology, 1998, v. 73, no. 1-3, p. 42-48 How to cite?
Journal: Journal of materials processing technology 
Abstract: Silicons are used in both wafer fabrication and infrared optics. Direct machining of silicon single crystal was carried out on a precision lathe equipped with an air spindle to a finish of 2.86 nm rms roughness. The success of the turning process depends on optimizing the machining parameters such as feed rate, depth of cut, tool rake angles, the cutting lubricants and the crystallographic orientation of the crystal being cut. It is shown that the commercial production of an optical surface on brittle materials is made possible by single point diamond turning.
URI: http://hdl.handle.net/10397/22083
ISSN: 0924-0136
EISSN: 1873-4774
DOI: 10.1016/S0924-0136(97)00210-0
Appears in Collections:Journal/Magazine Article

Access
View full-text via PolyU eLinks SFX Query
Show full item record

SCOPUSTM   
Citations

106
Last Week
0
Last month
2
Citations as of Nov 7, 2017

WEB OF SCIENCETM
Citations

87
Last Week
2
Last month
0
Citations as of Nov 15, 2017

Page view(s)

64
Last Week
1
Last month
Checked on Nov 12, 2017

Google ScholarTM

Check

Altmetric



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.