Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/22056
Title: Piezoelectric coefficients of aluminum nitride and gallium nitride
Authors: Lueng, CM
Chan, HLW 
Fong, WK
Surya, C 
Choy, CL 
Issue Date: 1999
Publisher: Materials Research Society
Source: Materials Research Society Symposium - Proceedings, 1999, v. 572, p. 389-394 How to cite?
Journal: Materials Research Society Symposium - Proceedings 
Abstract: Aluminum nitride (AlN) and gallium nitride (GaN) thin films have potential uses in high temperature, high frequency (e.g. microwave) acoustic devices. In this work, the piezoelectric coefficients of wurtzite AlN and GaN/AlN composite film grown on silicon substrates by molecular beam epitaxy were measured by a Mach-Zehnder type heterodyne interferometer. The effects of the substrate on the measured coefficients are discussed.
Description: Proceedings of the 1999 MRS Spring Meeting - Symposium on 'Wide-Bandgap Semiconductors for High-Power, High Frequency and High-Temperature Applications', San Francisco, CA, USA, 5-8 April 1999
URI: http://hdl.handle.net/10397/22056
ISSN: 0272-9172
Appears in Collections:Conference Paper

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