Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/22010
Title: Ferroelectricity of rare earth Eu doped sol-gel derived Pb(Zr xTi1-x)O3 thin films
Authors: Yu, YJ
Chan, HLW 
Wang, FP
Zhao, LC
Choy, CL 
Keywords: Ferroelectricity
PZT thin films
Rare earth dopant
Sol-gel process
Issue Date: 2002
Publisher: Taylor & Francis
Source: Integrated ferroelectrics, 2002, v. 46, p. 37-45 How to cite?
Journal: Integrated ferroelectrics 
Abstract: Pb(Zr0.52T0.48)O3 (PZT) thin films with different contents of rare earth europium (Eu) dopant (1 at. %-3 at. %) were fabricated on (111)Pt/Ti/SiO2/Si substrates by a sol-gel method with a rapid thermal process. The microstructure and ferroelectric properties such as the P-E hysteresis loop, fatigue, and retention were investigated. Improved ferroelelctric properties were observed in the capacitors fabricated with PZT thin films with 1% Eu dopant (denoted as PEZT1), including increased remanent polarization (Pr), decreased coercive electric field (EC) and improved the fatigue resistance. However, an obvious increase in coercive electric field and a slanted P-E loop were observed in the capacitors derived from the PZT thin films with Eu dopant of more than 2%. The so-called Rayleigh law used to describe the hysteresis of ferromagnetic materials in the subcoercive regime was extended to describe the subcoercive hysteresis in ferroelectric PEZT materials. The mechanism of the dopant effect on the ferroelectric properties was discussed.
URI: http://hdl.handle.net/10397/22010
ISSN: 1058-4587
EISSN: 1607-8489
DOI: 10.1080/10584580215367
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