Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/21904
Title: Effect of RuO2 electrode on polarization fatigue resistance of PbZr0.52Ti0.48O3 thin films
Authors: Wang, B
Kwok, KW 
Chan, HLW 
Choy, CL 
Tong, KY
Keywords: Fatigue
Leakage current
PZT thin films
RuO2 electrodes
Issue Date: 2001
Publisher: Taylor & Francis Inc.
Source: Ferroelectrics, 2001, v. 260, no. 1, p. 207-212 How to cite?
Journal: Ferroelectrics 
Abstract: Sol-gel derived lead zirconate titanate (PbZr0.52Ti 0.48O3, PZT) films of thickness 300 nm were deposited on RuO2/SiO2/Si and Pt/Ti/SiO2/Si substrates. Either a ruthenium dioxide (RuO2) or platinum (Pt) top electrode was deposited on each film. The ferroelectric properties and the fatigue and current characteristics of the films were investigated. The film has a higher fatigue resistance but also a higher leakage current when one or both of the electrodes are made of RuO2. The RuO2/PZT/RuO2 film exhibits negligible polarization fatigue, while the polarization of the RuO 2/PZT/Pt and Pt/PZT/RuO2 films decreases by about 40% after 109 switchings. This suggests that the polarization fatigue in the PZT films is controlled not only by the top RuO2/PZT interface but also by the bottom PZT/RuO2 interface.
URI: http://hdl.handle.net/10397/21904
ISSN: 0015-0193
EISSN: 1563-5112
DOI: 10.1080/00150190108016018
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