Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/21864
Title: Effect of heat treatment on infrared reflection property of Al-doped ZnO films
Authors: Miao, D
Jiang, S 
Shang, S 
Chen, Z
Keywords: AZO
Heat treatment
Infrared reflection
RF magnetron sputtering
Thin films
Issue Date: 2014
Publisher: Elsevier
Source: Solar energy materials and solar cells, 2014, v. 127, p. 163-168 How to cite?
Journal: Solar Energy Materials and Solar Cells 
Abstract: Al-doped ZnO (AZO) films were prepared on glass substrates by radio frequency (RF) magnetron sputtering technology. Crystal structure, surface morphology, electrical properties and infrared reflection of the AZO films were systematically investigated by X-ray Diffraction (XRD), Atomic Force Microscopy (AFM), Hall measurement system and Fourier Transform infrared spectroscopy, respectively. In addition, the corresponding properties of AZO films annealing at different temperatures ranging from room temperature to 400 °C were also analyzed. The results indicate that the prepared AZO films exhibit highest ZnO (0 0 2) peak intensity and lowest electrical resistivity after annealing at 300 °C. And AZO film with a low resistivity value of 0.0185 ω-cm, a relatively high average infrared reflection of 40% can be acquired after the films were annealed at 300 °C. The high infrared reflection property of the AZO film makes it a promising candidate for future heat shielding film.
URI: http://hdl.handle.net/10397/21864
ISSN: 0927-0248
DOI: 10.1016/j.solmat.2014.04.030
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