Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/21647
Title: Ultraviolet random lasing action from highly disordered n-AlN/p-GaN heterojunction
Authors: Yang, HY
Yu, SF 
Wong, JI
Cen, ZH
Liang, HK
Chen, TP
Keywords: Highly disordered AlN thin films
Ultraviolet random lasing
Laser diode
Issue Date: 2011
Publisher: American Chemical Society
Source: ACS applied materials and interfaces, 2011, v. 3, no. 5, p. 1726-1730 How to cite?
Journal: ACS applied materials and interfaces 
Abstract: Room-temperature random lasing is achieved from an n-AlN/p-GaN heterojunction. The highly disordered n-AlN layer, which was deposited on p-GaN:Mg layer via radio frequency magnetron sputtering, acts as a scattering medium to sustain coherent optical feedback. The p-GaN:Mg layer grown on sapphire provides optical amplification to the scattered light propagating along the heterojunction. Hence, lasing peaks of line width less than 0.4 nm are emerged from the emission spectra at round 370 nm for the heterojunction under forward bias larger than 5.1 V. Lasing characteristics of the heterojunction are in agreement with the behavior of random lasers.
URI: http://hdl.handle.net/10397/21647
ISSN: 1944-8244
EISSN: 1944-8252
DOI: 10.1021/am2002372
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