Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/21267
Title: Split-drain magnetic field-effect transistor channel charge trapping and stress induced sensitivity deterioration
Authors: Yang, Z
Siu, SL
Tam, WS
Kok, CW
Leung, CW 
Lai, PT
Wong, H
Tang, WM 
Pong, PWT
Keywords: Magnetic field-effect transistor (MAGFET)
Sectorial
Sensitivity
Sensitivity deterioration
Split-drain
Issue Date: 2014
Publisher: Institute of Electrical and Electronics Engineers
Source: IEEE transactions on magnetics, 2014, v. 50, no. 1, 2279849 How to cite?
Journal: IEEE transactions on magnetics 
Abstract: This paper proposed an analytical model on the deterioration of magnetic sensitivity of sectorial split-drain magnetic field-effect transistors (SD-MAGFETs). The deterioration is governed by the trap fill rate at the channel boundary traps, which is geometric dependent. Experimental results are presented which show good consistency with the analytical derivation. The deterioration is the most severe at a sector angle of 54.6°, which shows a design tradeoff with sensing hysteresis. Design guidelines for sectorial SD-MAGFET to obtain high sensitivity hysteresis and slow sensitivity deterioration are also presented which provide important information for efficient design.
URI: http://hdl.handle.net/10397/21267
ISSN: 0018-9464
EISSN: 1941-0069
DOI: 10.1109/TMAG.2013.2279849
Appears in Collections:Journal/Magazine Article

Access
View full-text via PolyU eLinks SFX Query
Show full item record

SCOPUSTM   
Citations

2
Last Week
0
Last month
0
Citations as of Aug 14, 2017

Page view(s)

38
Last Week
1
Last month
Checked on Aug 13, 2017

Google ScholarTM

Check

Altmetric



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.