Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/21167
Title: Low power flexible organic thin film transistors with amorphous Ba0.7Sr0.3TiO3 gate dielectric grown by pulsed laser deposition at low temperature
Authors: Wang, ZR
Xin, JZ
Ren, XC
Wang, XL
Leung, CW 
Shi, SQ 
Ruotolo, A
Chan, PKL
Keywords: Flexible organic transistor
High-k dielectric
Low operating power
Pulsed laser deposition
Bending test
Issue Date: 2012
Publisher: Elsevier Science Bv
Source: Organic electronics, 2012, v. 13, no. 7, p. 1223-1228 How to cite?
Journal: Organic Electronics 
Abstract: We deposited amorphous Ba0.7Sr0.3TiO3 (BST) on silicon and plastic substrate under 110 degrees C by pulsed laser deposition (PLD) and use it as the dielectric of the organic transistor. Depends on the thickness of BST layer, the highest mobility of the devices can achieve 1.24 cm(2) V (1) s (1) and 1.01 cm(2) V (1) s (1) on the silicon and polyethylene naphthalate (PEN) substrate, respectively. We also studied the upward and downward bending tests on the transistors and the dielectric thin films. We found that the BST dielectric pentacene transistor can maintain the mobility at 0.5 cm(2) V (1) s (1) or higher while the bending radius is around 3 mm in both upward and downward bending. Our finding demonstrates the potential application of PLD growth high-k dielectric in the large area organic electronics devices.
URI: http://hdl.handle.net/10397/21167
ISSN: 1566-1199
DOI: 10.1016/j.orgel.2012.03.027
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