Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/21125
Title: Growth of highly oriented of Pb(Zrx, Ti1-x)O3 film on porous silicon
Authors: Chen, Q
Wu, WB
Mak, CL 
Wong, KH
Keywords: Ferroelectric properties
Interface
Titanium oxide
X-Ray diffraction
Issue Date: 2001
Publisher: Elsevier
Source: Thin solid films, 2001, v. 397, no. 1-2, p. 1-3 How to cite?
Journal: Thin solid films 
Abstract: Thin Pb(Zr0.52Ti0.48)O3 (PZT) films on porous silicon (PS) substrates were fabricated by a pulsed laser ablation (PLA) technique. X-Ray diffraction studies show the presence of c-axis orientation only. The full width at half maximum (FWHM) of the rocking curve of the diffraction at 2θ 44.22° (002) is less than 0.7°, showing high (001)-orientation. The film is ferroelectric and exhibits a symmetric hysteresis loop. The remnant polarization and the coercive field were 4.2 μc/cm2 and 38 kV/cm, respectively. The results indicate that using PS as a substrate could solve well the problems not only of the growth of oriented PZT film, but also of preventing diffusion between a ferroelectric and Si substrate during device fabrication without any intermediate layer.
URI: http://hdl.handle.net/10397/21125
ISSN: 0040-6090
EISSN: 1879-2731
DOI: 10.1016/S0040-6090(01)01414-6
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