Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/21023
Title: High-performance pentacene thin-film transistor with high-κ HfLaON as gate dielectric
Authors: Han, CY
Tang, WM 
Leung, CH
Che, CM
Lai, PT
Keywords: Fluorination
HfLaON
High-κ dielectric
Organic thin-film transistor (OTFT)
Issue Date: 2013
Publisher: Institute of Electrical and Electronics Engineers
Source: IEEE electron device letters, 2013, v. 34, no. 11, 6615967, p. 1397-1399 How to cite?
Journal: IEEE electron device letters 
Abstract: Pentacene organic thin-film transistor (OTFT) using high-k HfLaON gate dielectric is proposed, and the effects of varying its nitrogen content are studied. The HfLaON film is deposited using reactive sputtering of Hf-La target in Ar/O2/N2 ambience with different N2 flow rates and then annealed in N2. All the OTFTs can operate at low voltage with a threshold voltage as low as-0.53~V. The OTFT with an optimal nitrogen content can achieve a carrier mobility of 0.71 cm2/Vċs, which is about twice that of its counterpart with HfLaO gate dielectric.
URI: http://hdl.handle.net/10397/21023
ISSN: 0741-3106
DOI: 10.1109/LED.2013.2281661
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