Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/20876
Title: Leakage current in PZT films with sputtered RuOx electrodes
Authors: Law, CW
Tong, KY
Li, JH
Li, K
Issue Date: 2000
Publisher: Pergamon-Elsevier Science Ltd
Source: Solid-state electronics, 2000, v. 44, no. 9, p. 1569-1571 How to cite?
Journal: Solid-State Electronics 
Abstract: We have studied the leakage current in sol-gel PZT capacitors with reactive sputtered RuOx electrodes under different oxygen partial pressures during sputtering. The amount of oxygen content in the electrodes has been found to have a significant effect on the leakage current. Considerable decrease of leakage current at lower electric field can be achieved by sputtering at a higher oxygen partial pressure of 20%. Correlation with degradation experimental results suggests that the presence of an oxygen deficient layer near the electrode has crucial effect in controlling both the leakage current and degradation.
URI: http://hdl.handle.net/10397/20876
ISSN: 0038-1101
DOI: 10.1016/S0038-1101(00)00102-7
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