Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/20828
Title: 0.18m CMOS dual-band low-noise amplifier for ZigBee development
Authors: Xuan, K
Tsang, KF
Lee, WC 
Lee, SC
Issue Date: 2010
Publisher: Institution of Engineering and Technology
Source: Electronics letters, 2010, v. 46, no. 1, p. 85-86 How to cite?
Journal: Electronics letters 
Abstract: A fully integrated dual-band (868/915MHz and 2.4GHz) low-noise amplifier is designed using 0.18m RFCMOS technology for ZigBee development. In both bands, achieved gains are better than 15dB and the resulting noise figures are better than 2.0dB. The input and the output reflections are measured to be better than -10dB in both bands. By tuning varactors in input and output LC tanks, frequency drifts due to unexpected parasitics and process variations are easily compensated. The amplifier works at 1.2V supply voltage with 10mA current dissipation.
URI: http://hdl.handle.net/10397/20828
ISSN: 0013-5194
EISSN: 1350-911X
DOI: 10.1049/el.2010.2448
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