Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/20762
Title: Low-frequency excess noise characterizations of laser-assisted de-bonded GaN films
Authors: Chan, CP
Leung, BH
Fong, WK
Lai, PK
Loke, YH
Surya, C 
Yue, TM 
Man, HC 
Xiu, X
Zhang, R
Keywords: GaN
Laser-assisted de-bonding
Low-frequency noise
Issue Date: 2005
Publisher: North-Holland
Source: Applied surface science, 2005, v. 252, no. 4, p. 1049-1056 How to cite?
Journal: Applied surface science 
Abstract: Systematic characterization of flicker noise was conducted on GaN-based metal-semiconductor-metal (MSM) interdigitated devices. The devices were fabricated on both the regular GaN-on-sapphire (type A) and laser de-bonded films followed by layer transfer of hydride vapor phase epitaxy-grown GaN films to Si substrates (type B). Experimental results indicated no significant degradation in the I-V characteristics for Schottky MSM devices fabricated on type B films compared to those fabricated on type A films. However, substantial increase in the flicker noise level, particularly in the low-temperature regime, is observed among the ohmic MSM devices fabricated on type B films. The experimental data suggest that material degradation occurs at the vicinity of the GaN-sapphire interface, while in regions close to the GaN film surface there is practically no change in the film quality. This is supported by finite element simulation of the temperature of the film during laser irradiation. The results indicate that the temperature dropped from 1400 K at the GaN-sapphire interface to about 1000 K within 0.5 μm away from the interface stipulating that material degradation occurs only within 0.5 μm from the GaN-sapphire interface.
URI: http://hdl.handle.net/10397/20762
ISSN: 0169-4332
EISSN: 1873-5584
DOI: 10.1016/j.apsusc.2005.01.146
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