Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/20566
Title: Study of polarization switching in PZT films with RuO2 electrodes by conducting atomic force microscopy
Authors: Wang, B
Kwok, KW 
Chan, HLW 
Choy, CL 
Tong, KY
Luo, EZ
Xu, JB
Wilson, IH
Keywords: Internal field
Polarization switching
PZT
Self-polarization
Issue Date: 2002
Publisher: Elsevier
Source: Materials characterization, 2002, v. 48, no. 2-3, p. 249-253 How to cite?
Journal: Materials characterization 
Abstract: Sol-gel derived lead zirconate titanate (PbZr0.4Ti0.6O3, PZT) films, 2 μm thick, were deposited on ruthenium dioxide (RuO2)/SiO2/Si substrates. The domain structure and polarization switching of the PZT films were studied by conducting atomic force microscopy (AFM). Large self-polarization along the film thickness direction and asymmetric piezoresponse hysteresis loop were observed in the as-deposited RuO2/PZT/RuO2 films. The room-temperature pyroelectric coefficient of the as-deposited films was about 230 μC/m2 K. The internal field associated with charged defects was believed to be responsible for the self-polarization and asymmetric piezoelectric response in the as-deposited RuO2/PZT/RuO2 films.
URI: http://hdl.handle.net/10397/20566
ISSN: 1044-5803
DOI: 10.1016/S1044-5803(02)00255-3
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