Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/20513
Title: Interfacial nature of resistive switching effect in perovskite-oxide thin film devices
Authors: Lau, HK
Chan, PKL
Leung, CW 
Keywords: Calcium compounds
Electrodes
Epitaxial layers
Interface phenomena
Lanthanum compounds
Protactinium compounds
Switching
Thin film devices
Titanium
Issue Date: 2010
Publisher: IEEE
Source: 2010 3rd International Nanoelectronics Conference (INEC), 3-8 January 2010, Hong Kong, p. 744-745 How to cite?
Abstract: Resistive switching effect has been demonstrated in LaNiO3Pa0.7Ca0.3MnO3Ti top-down device structures. Hysteretic current-voltage (I-V) characteristic was observed by applying potential differences in the order of 5 V across the electrodes. I-V characteristics with different combinations of top and bottom electrodes were measured, in order to identify the location contributing to the switching. Our results suggested that the interface between PCMO and the electrodes are responsible for the resistive switching effect.
URI: http://hdl.handle.net/10397/20513
ISBN: 978-1-4244-3543-2
978-1-4244-3544-9 (E-ISBN)
DOI: 10.1109/INEC.2010.5424539
Appears in Collections:Conference Paper

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