Ultraviolet detecting apparatus

Abstract

The present invention relates an UV ray detection device. It includes the following structure: a saphire base layer; a high-temperature aluminium nitride buffer layer grown on said saphire base layer; a medium-temperature gallium nitride buffer layer grown on the high-temperature aluminium nitride buffer layer; a gallium nitride epitaxial layer deposited on said medium-temperature gallium nitride buffer layer; a Schottky junction layer formed on said gallium nitride epitaxial layer; and several resistance contacts also formed on said gallium nitride epitaxial layer. Said high-temperature aluminium nitride buffer layer and said medium-temperature gallium nitride buffer layer are formed into double buffer layer structure, so that the stability and radiation resistance of said UV ray detection device are greatly raised. 一种紫外线检测装置，包括如下的结构：一蓝宝石基底层；一高温氮化铝缓冲层，生长在该蓝宝石基底层之上；一中温氮化镓缓冲层，生长在该高温氮化铝缓冲层之上；一氮化镓外延层，沉积在该中温氮化镓缓冲层之上；一肖特基结层，形成在该氮化镓外延层之上；多个电阻触点，也形成在该氮化镓外延层上；该高温氮化铝缓冲层和该中温氮化镓缓冲层形成了双重缓冲层结构，从而提高了该紫外线检测装置的稳定性和耐辐射性。其中该高温氮化铝缓冲层和该中温氮化镓缓冲层由射频等离子体增强分子束磊晶成长技术形成。