Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/20152
Title: Mechanical and etching properties of dual ion beam deposited hydrogen-free silicon nitride films
Authors: Tsang, MP
Ong, CW 
Chong, N
Choy, CL
Lim, PK
Hung, WW
Issue Date: 2001
Publisher: Amer Inst Physics
Source: Journal of vacuum science and technology, part a : vacuum, surfaces and films, 2001, v. 19, no. 5, p. 2542-2548 How to cite?
Journal: Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films 
Abstract: The hydrogen-free silicon nitride (SiNx) films with x varying from 0 to 1.3 were prepared by sputtering a silicon target with concurrent nitrogen ion assisted at an energy of 250 eV. The composition and structure of the films were investigated by x-ray photoelectron spectroscopy (XPS) and infrared (IR) absorption. The etching rate of the silicon films in buffered hydrofluoric acid (BHF) at room temperature was zero and rose to 7 nm min-1 at x≥0.9. The mechanical and etching properties suggested that dual ion beam deposition SiNx films are potentially useful materials in microelectromechanical (MEMS) devices.
URI: http://hdl.handle.net/10397/20152
ISSN: 0734-2101
DOI: 10.1116/1.1392397
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