Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/20136
Title: Growth of epitaxial quality SnS thin films on graphene
Authors: Wang, W
Leung, KK
Fong, WK
Wang, SF
Hui, YY
Lau, SP
Surya, C 
Keywords: SnS
Molecular beam epitaxy
Photovoltaics
Van der Waals Epitaxy
Issue Date: 2012
Publisher: IEEE
Source: 2012 IEEE International Conference on Electron Devices and Solid State Circuit (EDSSC), 3-5 December 2012, Bangkok, p. 1-3 How to cite?
Abstract: SnS van der Waals epitaxies (vdWEs) were grown by molecular beam epitaxy (MBE) on layered substrates such as graphene and mica. Photo-absorption measurements indicate an indirect bandgap of ~1 eV and a direct bandgap of ~1.25 eV. The technique leads to significant improvement in the crystallinity of the films compared to the samples deposited on convention crystalline semiconductors or soda lime glass. The absorption coefficient, α, is of the order of 104 cm-1 with sharp cutoff in energy indicating low concentration of bandgap states. Hole mobility of ~81 cm2V-1s-1 was observed for SnS films on graphene/GaAs(100) substrates.
URI: http://hdl.handle.net/10397/20136
ISBN: 978-1-4673-5694-7
DOI: 10.1109/EDSSC.2012.6482879
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