Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/20111
Title: Resistive switching of carbon-based RRAM with CNT electrodes for ultra-dense memory
Authors: Chai, Y
Wu, Y
Takei, K
Chen, HY
Yu, S
Chan, PCH 
Javey, A
Wong, HSP
Issue Date: 2010
Source: Technical digest - International Electron Devices Meeting, IEDM, 2010, 5703328, p. 9.3.1-9.3.4 How to cite?
Abstract: We demonstrate the nonvolatile resistive switching of an amorphous carbon (a-C) layer with carbon nanotube (CNT) electrodes for ultra-dense memory. The use of CNT as electrode leads to the ultimately scaled cross-point area (∼1 nm2), and the use of a-C results in an all-carbon memory. Carbon-based complementary resistive switching (CRS) is shown for the first time, enabling cross-point memory without cell selection devices.
Description: 2010 IEEE International Electron Devices Meeting, IEDM 2010, San Francisco, CA, 6-8 December 2010
URI: http://hdl.handle.net/10397/20111
ISBN: 9781424474196
ISSN: 0163-1918
DOI: 10.1109/IEDM.2010.5703328
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