Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/20109
Title: The orientation-selective growth of LaNiO3 films on Si(100) by pulsed laser deposition using a MgO buffer
Authors: Chen, XY
Wong, KH
Mak, CL 
Liu, JM
Yin, XB
Wang, M
Liu, ZG
Issue Date: 2002
Publisher: Springer
Source: Applied physics. A, Materials science & processing, 2002, v. 75, no. 4, p. 545-549 How to cite?
Journal: Applied physics. A, Materials science & processing 
Abstract: Highly (100)-oriented, (110)-oriented and polycrystalline LaNiO3 (LNO) films were successfully prepared on Si(100) using an oriented MgO film as a buffer. It was somewhat surprising to find that the orientation relation between the LNO film and the corresponding MgO buffer was: LNO(100)\MgO(110), LNO(110)\MgO(111) and LNO(polycrystalline)\MgO(100). The crystalline quality of the LNO films was shown to be sensitive to the preparation conditions of the MgO buffer. The film surface was very smooth, without micrometer-sized droplets being observed. All LNO films were of metallic conductivity, with a room-temperature resistivities of approximately 250, 280 and 420 μΩ cm for the (110)-oriented, (100)-oriented and polycrystalline LNO, respectively.
URI: http://hdl.handle.net/10397/20109
ISSN: 0947-8396
EISSN: 1432-0630
DOI: 10.1007/s003390101048
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