Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/20097
Title: Fabrication of transparent p-n junction composed of heteroepitaxially grown p-Li0.15Ni0.85O and n-ZnO films for UV-detector applications
Authors: Zhuang, L
Wong, KH
Issue Date: 2007
Publisher: Springer
Source: Applied physics. A, Materials science & processing, 2007, v. 87, no. 4, p. 787-791 How to cite?
Journal: Applied physics. A, Materials science & processing 
Abstract: Thin films of high-quality p-type Li0.15Ni0.85O (LNO) and n-type ZnO were heteroepitaxially grown on MgO(111) substrate by pulsed laser deposition technique to form transparent wide bandgap heterojunctions. The epitaxial nature of this p-LNO/n-ZnO/MgO heterojunction was confirmed to be (111)LNO
(0001)ZnO
(111)MgO (out-of-plane) and (002)LNO
(1002)ZnO
(002)MgO (in-plane) by X-ray diffraction. Optical transmittance spectrum and I-V characteristics were obtained at room temperature. The heterojunction exhibits reasonable optical transmittance of 50-60% on average in the whole infrared and visible region, and highly asymmetric electrical rectification with a turn-on voltage of about 1.0 V and a small leakage current. The highest photoresponsivity for a wavelength of 350 nm is 3.4×103 V/W when the junction is irradiated under 5 μW UV illumination. The spectral response peak is obtained in the UV region and a reasonable large responsivity is shown for this p-LNO/n-ZnO/MgO heterojunction, which suggests the possibility of an inexpensive transparent oxide UV detector in a wide variety of electronics applications.
URI: http://hdl.handle.net/10397/20097
ISSN: 0947-8396
EISSN: 1432-0630
DOI: 10.1007/s00339-007-3921-0
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