Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/19981
Title: | Graphitic interfacial layer to carbon nanotube for low electrical contact resistance | Authors: | Chai, Y Hazeghi, A Takei, K Chen, HY Chan, PCH Javey, A Wong, HSP |
Issue Date: | 2010 | Source: | Technical digest - International Electron Devices Meeting, IEDM, 2010, 5703327, p. 9.2.1-9.2.4 How to cite? | Abstract: | Graphitic interfacial layer is used to wet the surface of carbon nanotube and dramatically lower the contact resistance of metal to metallic single-wall carbon nanotube (m-CNT). Using Ni-catalyzed graphitization of amorphous carbon (a-C), the average resistance of metal/m-CNT is reduced by 7X compared to the same contact without the graphitic layer. Small-signal conductance measurements from 77K to 300K reveal the effective contact improvement. | Description: | 2010 IEEE International Electron Devices Meeting, IEDM 2010, San Francisco, CA, 6-8 December 2010 | URI: | http://hdl.handle.net/10397/19981 | ISBN: | 9781424474196 | ISSN: | 0163-1918 | DOI: | 10.1109/IEDM.2010.5703327 |
Appears in Collections: | Conference Paper |
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