Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/19897
Title: Fabrication and characterization of all-perovskite oxide p-n junctions based on La1-xSrxMnO3 and Nb-1wt% doped SrTiO3
Authors: Lam, CY
Wong, KH
Keywords: Electrical properties
Films
p-n junction
Transition metal oxides
Issue Date: 2005
Publisher: Elsevier Sci Ltd
Source: Journal of the European ceramic society, 2005, v. 25, no. 12 spec. iss., p. 2141-2145 How to cite?
Journal: Journal of the European Ceramic Society 
Abstract: All-perovskite oxide p-n junctions have been fabricated by pulsed laser deposition. Semiconducting p-type La1-xSrx MnO3 (LSMO) and n-type Nb-1 wt% doped SrTiO3 (NSTO) were used. Thin films of LSMO were epitaxially grown on (1 0 0) NSTO single crystal substrate at 650 °C and under an ambient oxygen pressure of 100 mTorr. Heteroepitaxial relationship of (1 0 0)LSMO∥(1 0 0)NSTO has been obtained. Good electrical rectifying characteristics have been observed at room temperature. LSMO is a well known colossal magnetoresistive material with a Curie temperature Tc at around room temperature. The I-V characteristics of the p-LSMO/n-NSTO junction were studied under the temperature range of 77-700 K and an applied magnetic field of up to 1 T.
URI: http://hdl.handle.net/10397/19897
ISSN: 0955-2219
DOI: 10.1016/j.jeurceramsoc.2005.03.200
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