Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/19792
Title: Physical and electrical properties of sputtered Ru2Si3/Si structures
Authors: Jelenkovic, EV
Tong, KY
Cheung, WY
Wong, SP
Issue Date: 2003
Publisher: Iop Publishing Ltd
Source: Semiconductor science and technology, 2003, v. 18, no. 6, p. 454-459 How to cite?
Journal: Semiconductor Science and Technology 
Abstract: Ruthenium suicide films were formed on silicon wafers by sputtering from either ruthenium or ruthenium suicide targets with subsequent annealing in the temperature range of 400-800 °C. The growth of Ru2Si3 was confirmed by x-ray diffraction, Raman spectroscopy and ellipsometric measurements. Ru/Si and Ru2Si3/Si vertical heterostructure diodes were fabricated and the barrier height was extracted through current - voltage measurements. Good rectifying properties of polycrystalline Ru2Si3 /Si structures were observed.
URI: http://hdl.handle.net/10397/19792
ISSN: 0268-1242
DOI: 10.1088/0268-1242/18/6/311
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