Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/19792
Title: Physical and electrical properties of sputtered Ru2Si3/Si structures
Authors: Jelenkovic, EV
Tong, KY
Cheung, WY
Wong, SP
Issue Date: 2003
Publisher: Iop Publishing Ltd
Source: Semiconductor science and technology, 2003, v. 18, no. 6, p. 454-459 How to cite?
Journal: Semiconductor Science and Technology 
Abstract: Ruthenium suicide films were formed on silicon wafers by sputtering from either ruthenium or ruthenium suicide targets with subsequent annealing in the temperature range of 400-800 °C. The growth of Ru2Si3 was confirmed by x-ray diffraction, Raman spectroscopy and ellipsometric measurements. Ru/Si and Ru2Si3/Si vertical heterostructure diodes were fabricated and the barrier height was extracted through current - voltage measurements. Good rectifying properties of polycrystalline Ru2Si3 /Si structures were observed.
URI: http://hdl.handle.net/10397/19792
ISSN: 0268-1242
DOI: 10.1088/0268-1242/18/6/311
Appears in Collections:Journal/Magazine Article

Access
View full-text via PolyU eLinks SFX Query
Show full item record

SCOPUSTM   
Citations

14
Last Week
0
Last month
0
Citations as of Aug 17, 2017

WEB OF SCIENCETM
Citations

14
Last Week
0
Last month
0
Citations as of Aug 20, 2017

Page view(s)

35
Last Week
3
Last month
Checked on Aug 20, 2017

Google ScholarTM

Check

Altmetric



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.