Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/19764
Title: Domain matching epitaxy of cubic MgxZn1-xO films on LaAlO3 by pulsed laser deposition
Authors: Zhuang, L
Wong, KH
Pang, GKH
Issue Date: 2007
Publisher: Springer
Source: Applied physics. A, Materials science & processing, 2007, v. 89, no. 2, p. 543-546 How to cite?
Journal: Applied physics. A, Materials science & processing 
Abstract: Wide band gap MgxZn1-xO alloy films were grown on LaAlO3(100) (LAO) substrates by pulsed laser deposition. Structural characterization by X-ray and electron diffraction reveals a single cubic phase of c-MgxZn1-xO (c-MZO) with composition x>0.6 and heteroepitaxial relationships of (100)c-MZO ∥ (100)LAO (out-of-plane) and (011)c-MZO ∥ (010)LAO (in-plane). The strain relaxation is analyzed in detail under the framework of domain matching epitaxy. The sequence of 5/4, 4/3 domains observed departs from the ideal 1:4 ratio, indicating a complex strain relaxation mechanism.
URI: http://hdl.handle.net/10397/19764
ISSN: 0947-8396
EISSN: 1432-0630
DOI: 10.1007/s00339-007-4121-7
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