Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/19741
Title: Characterization of the interface between the Hf-based high-k thin film and the Si using spatially resolved electron energy-loss spectroscopy
Authors: Wang, XF
Li, Q
Lee, PF
Dai, JY 
Gong, XG
Keywords: Electron energy-loss spectroscopy
HfAlO
HfO 2
High-k dielectric
Interface
Issue Date: 2010
Publisher: Pergamon-Elsevier Science Ltd
Source: Micron, 2010, v. 41, no. 1, p. 15-19 How to cite?
Journal: Micron 
Abstract: The interfacial structures of HfO 2 and HfAlO thin films on Si have been investigated using spatially resolved electron energy-loss spectroscopy. We have found that interfaces are not atomically sharp, and variation in the symmetry of the local atomic coordination lasts for a couple of monolayers for both the as-deposited HfO 2 and the HfAlO samples. Annealing of the HfO 2 film in the oxygen environment leads to the formation of a thick SiO 2/SiO x stack layer in-between the original HfO 2 and the Si substrate. As a comparison, the interfacial stability is significantly improved by Al incorporation into the HfO 2 film (forming HfAlO), which effectively reduced/eliminated the interfacial silicon oxide formation during the oxygen annealing process. The mechanism of the high-k film/substrate stabilization by Al incorporation is discussed based on the experimental results.
URI: http://hdl.handle.net/10397/19741
DOI: 10.1016/j.micron.2009.07.009
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