Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/19645
Title: Characteristics of MBE-Grown GaN detectors on double buffer layers under high-power ultraviolet optical irradiation
Authors: Lui, HF
Fong, WK
Surya, C 
Keywords: Device degradation
GaN
Low-frequency noise
Molecular beam epitaxy
Radiation hardness
Ultraviolet photo-detectors
Issue Date: 2007
Publisher: Institute of Electrical and Electronics Engineers
Source: IEEE transactions on electron devices, 2007, v. 54, no. 4, p. 671-676 How to cite?
Journal: IEEE transactions on electron devices 
Abstract: In this paper, we present experimental investigations on the radiation hardness of GaN-based Schottky diode photodetectors. High-power ultraviolet (UV) radiation obtained from a Xenon lamp is used as the light source for the optical-stressing experiment. Two types of devices are being investigated. One has a double-buffer-layer structure that consists of a conventional high-temperature AlN buffer layer and an intermediate temperature buffer layer (type I), and the control device was fabricated with only a conventional AlN buffer layer (type II). Detailed current-voltage, capacitance-voltage, flicker noise, and responsivity measurements performed on the detectors show that the degradations of the devices arose from the defects present at the Schottky junctions due to the exposure of the devices to the high-power UV radiation. Both types of devices exhibit degradation in their optoelectronic properties. However, type-I devices, in general, exhibit gradual and slow degradation, whereas type-II devices exhibit catastrophic breakdowns in the device characteristics. Our experimental data indicate significant improvement in the radiation hardness for type-I devices.
URI: http://hdl.handle.net/10397/19645
ISSN: 0018-9383
EISSN: 1557-9646
DOI: 10.1109/TED.2007.892361
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