Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/19368
Title: Preparation and characterisation of compositionally graded BaxSr1-xTiO3 thin films
Authors: Adikary, SU
Ding, AL
Chan, HLW 
Issue Date: 2002
Publisher: Springer
Source: Applied physics. A, Materials science & processing, 2002, v. 75, no. 5, p. 597-600 How to cite?
Journal: Applied physics. A, Materials science & processing 
Abstract: BaxSr1-xTiO3 thin films with a compositional gradient of x = 0.3 to 1 (in 0.1 mole fraction increments) were fabricated on Pt/Ti/SiO2/Si substrates using a modified sol-gel technique. The graded film crystallised in a perovskite structure and consists of a uniform microstructure with comparatively larger grains. The room-temperature relative dielectric constant (εr) and dielectric loss (tan δ) at 100 kHz were found to be 305 and 0.03 respectively. Dielectric peaks were not observed in the temperature range from -20°C to 120°C. The dielectric constant and dielectric loss were almost independent of temperature. Polarisation-electric field measurements at room temperature revealed a saturated but slim hysteresis loop with a remanent polarisation (Pr) of 0.6 μC/cm2 and a coercive field (Ec) of 2.4 kV/mm. The graded film behaves as a stack of BaxSr1-xTiO3 capacitors connected in series and hence the dielectric Curie peaks are removed.
URI: http://hdl.handle.net/10397/19368
ISSN: 0947-8396
EISSN: 1432-0630
DOI: 10.1007/s003390101046
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