Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/19076
Title: GaN/MgO/ZnO heterojunction light-emitting diodes
Authors: Chen, X
Ng, AMC
Djurisic, AB
Chan, WK
Fong, PWK
Lui, HF
Surya, C 
Cheng, CCW
Kwok, WM
Keywords: Electrodeposition
Electroluminescence
Keywords
Light-emitting diodes
Photoluminescence
Zinc oxide
Issue Date: 2013
Publisher: Elsevier
Source: Thin solid films, 2013, v. 527, p. 303-307 How to cite?
Journal: Thin solid films 
Abstract: Light-emitting diodes (LEDs) based on p-GaN/ZnO heterojunction were fabricated. ZnO thin film deposited by electron-beam deposition and ZnO nanorods grown by electrodeposition were used as n-type materials. Devices with and without ~ 10 nm thick MgO interlayer between p-GaN and ZnO were prepared. The existence of MgO interlayer significantly affected LED performance compared to LEDs without MgO interlayer. In the photoluminescence measurements, p-GaN/MgO/ZnO nanorods exhibited stimulated emission under pulsed optical excitation, while no stimulated emission was observed in the absence of MgO. The effect of MgO interlayer on ZnO growth, optical and electrical properties, as well as the emission spectra of LEDs is discussed in detail.
URI: http://hdl.handle.net/10397/19076
ISSN: 0040-6090
EISSN: 1879-2731
DOI: 10.1016/j.tsf.2012.12.027
Appears in Collections:Journal/Magazine Article

Access
View full-text via PolyU eLinks SFX Query
Show full item record

SCOPUSTM   
Citations

3
Last Week
0
Last month
0
Citations as of Aug 14, 2017

WEB OF SCIENCETM
Citations

3
Last Week
0
Last month
0
Citations as of Aug 21, 2017

Page view(s)

41
Last Week
3
Last month
Checked on Aug 20, 2017

Google ScholarTM

Check

Altmetric



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.