Please use this identifier to cite or link to this item:
Title: Temperature-dependent residual stresses in a hetero-epitaxial thin film system
Authors: Liu, M
Ruan, HH 
Zhang, LC
Moridi, A
Keywords: Residual stress
Thin film
X-ray diffraction
Issue Date: 2015
Publisher: Elsevier
Source: Thin solid films, 2015, v. 584, p. 186-191 How to cite?
Journal: Thin solid films 
Abstract: This paper investigates the temperature dependence of residual stresses in a hetero-epitaxial thin film on a sapphire substrate. The X-ray diffraction technique was employed and a theoretical analysis was also carried out. It was found that the magnitude of compressive residual stresses decrease with increasing the temperature, and that the rate of the change can be well predicted theoretically. It was discovered, however, that the residual stresses vary with the film thickness. For a film of 0.3 μm in thickness at all temperatures, the magnitudes of compressive stresses measured are greater than the theoretically predicted; but for that of 5 μm in thickness, the magnitudes measured become smaller than the theoretical. This leads to the conclusion that the mitigation of lattice mismatch, essentially through interface misfit dislocations, could have varied with the change of the film thickness.
ISSN: 0040-6090
EISSN: 1879-2731
DOI: 10.1016/j.tsf.2015.01.072
Appears in Collections:Conference Paper

View full-text via PolyU eLinks SFX Query
Show full item record

Page view(s)

Last Week
Last month
Citations as of Sep 17, 2018

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.