Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/18746
Title: Nitridation of hafnium oxide by reactive sputtering
Authors: Tong, KY
Jelenkovic, EV
Liu, W
Dai, JY 
Keywords: Hafnium oxide
Sputtering
Issue Date: 2006
Publisher: Elsevier
Source: Microelectronic engineering, 2006, v. 83, no. 2, p. 293-297 How to cite?
Journal: Microelectronic engineering 
Abstract: Hafnium oxide films were RF sputtered from HfO2 target in Ar/O2 or Ar/N2 ambient on silicon substrates. The composition of the deposited films was analyzed by X-ray photoelectron spectroscopy (XPS). For samples sputtered in Ar/N2, it was observed that nitrogen was incorporated in the bulk of hafnium oxide films in the form of HfON, and SiON layer was formed at the silicon-insulator interface. After annealing the hafnium oxide films at 600-700 °C, MOS structures were fabricated and used for electrical characterization. The effects of nitridation of hafnium oxide on both the capacitance-voltage and current-voltage characteristics of the MOS capacitors were discussed.
URI: http://hdl.handle.net/10397/18746
ISSN: 0167-9317
EISSN: 1873-5568
DOI: 10.1016/j.mee.2005.09.001
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