Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/18742
Title: Low-frequency noise properties of double channel AlGaN/GaN HEMTs
Authors: Jha, SK
Surya, C 
Chen, KJ
Lau, KM
Jelencovic, E
Keywords: Dual channel
GaN
HEMT
Hooge parameter
Low-frequency noise
Issue Date: 2008
Publisher: Pergamon-Elsevier Science Ltd
Source: Solid-state electronics, 2008, v. 52, no. 5, p. 606-611 How to cite?
Journal: Solid-State Electronics 
Abstract: Low-frequency noise in MOCVD-grown AlGaN/GaN/AlGaN/GaN double channel high electron mobility transistors (HEMTs) on sapphire substrate was investigated over a wide range of temperatures from 80 K to 300 K. Generation-recombination (g-r) noise was observed arising from the traps with activation energies 140 meV, 188 meV and 201 meV. Hooge parameter was estimated to be 1.6 ?? 10 -3 at room temperature. Our work demonstrates good dc and low-frequency noise properties for the device.
URI: http://hdl.handle.net/10397/18742
ISSN: 0038-1101
DOI: 10.1016/j.sse.2007.10.002
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