Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/18616
Title: Ferroelectric and piezoelectric properties of Pb(Zr,Ti)O3 thin films integrated on SOI wafers
Authors: Wang, Y 
Cheng, YL
Liu, WL
Lam, TY
Song, ZT
Feng, SL
Chan, HLW 
Choy, CL
Keywords: Epitaxy
MEMs
Piezoelectric
PZT
SOI
Issue Date: 2005
Publisher: Taylor & Francis
Source: Integrated ferroelectrics, 2005, v. 69, p. 223-229 How to cite?
Journal: Integrated ferroelectrics 
Abstract: This paper reports on the integration and characterization of Pb(Zr,Ti)O3 (PZT) thin film on silicon-on-insulator (SOI) wafers. Twoperovskite-structured oxide layers, SrTiO3 and (La,Sr)CoO 3, were deposited by magnetron sputtering on the SOI to form a template and the bottom electrode. On the buffered SOI, the PZT thin film was deposited by sol-gel and spin coating techniques followed by thermal treatment for crystallization. X-ray diffraction revealed that PZT has a good quality of crystallization and a preferred orientation along the [001]-direction. The electrical measurement indicates that the PZT film on SOI has good ferroelectric and piezoelectric properties. The piezoelectric coefficient of the PZT film was found to be about 80 × 10-12 m/V.
Description: 16th International Symposium on Integrated Ferroelectrics, ISIF-16, Gyeongju, 5-8 April 2004
URI: http://hdl.handle.net/10397/18616
ISSN: 1058-4587
EISSN: 1607-8489
DOI: 10.1080/10584580590898730
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