Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/18170
Title: Low-field magnetoresistance in oxygen-deficient La0.5Sr0.5MnO3 thin films as approached by spin-polarized tunneling model
Authors: Yuan, GL
Liu, JM
Chan, HLW 
Choy, CL 
Ong, CK
Liu, ZG
Du, YW
Keywords: Low-field magnetoresistance
LSMO
Spin-polarized tunneling
Issue Date: 2002
Source: Materials letters, 2002, v. 53, no. 1-2, p. 76-82 How to cite?
Journal: Materials Letters 
Abstract: The low-field magnetoresistance (LFMR) of oxygen-deficient La0.5Sr0.5MnO3 (LSMO) thin films deposited by laser ablation under various oxygen pressures is studied with characterization of the microstructural, electro- and magneto-transport properties in relation to oxygen vacancies, and explained by the spin-polarized tunneling (SPT) model. Significant oxygen deficiency dependence of these properties is revealed. It is argued that the insulating and non-ferromagnetic zones centered with the oxygen vacancies, together with grain boundaries, form barriers for electron tunneling, and enhanced low-field magnetoresistance is obtained for the films with optimized oxygen deficiency. The high spin-flip probability for the films with serious oxygen deficiency is predicted.
URI: http://hdl.handle.net/10397/18170
ISSN: 0167-577X
DOI: 10.1016/S0167-577X(01)00457-8
Appears in Collections:Journal/Magazine Article

Access
View full-text via PolyU eLinks SFX Query
Show full item record

SCOPUSTM   
Citations

8
Citations as of Feb 23, 2017

WEB OF SCIENCETM
Citations

8
Last Week
0
Last month
0
Citations as of Feb 24, 2017

Page view(s)

16
Last Week
1
Last month
Checked on Feb 19, 2017

Google ScholarTM

Check

Altmetric



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.