Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/18147
Title: Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers
Authors: Leung, BH
Fong, WK
Surya, C 
Lu, LW
Ge, WK
Keywords: Deep level transient Fourier spectroscopy
Deep levels
GaN
Low-frequency noise
Issue Date: 2003
Publisher: Elsevier Sci Ltd
Source: Materials science in semiconductor processing, 2003, v. 6, no. 5-6, p. 523-525 How to cite?
Journal: Materials Science in Semiconductor Processing 
Abstract: Metal-semiconductor-metal (MSM) structures were fabricated by RF-plasma-assisted MBE using different buffer layer structures. One type of buffer structure consists of an A1N high-temperature buffer layer (HTBL) and a GaN intermediate temperature buffer layer (ITBL), another buffer structure consists of just a single A1N HTBL. Systematic measurements in the flicker noise and deep level transient Fourier spectroscopy (DLTFS) measurements were used to characterize the defect properties in the films. Both the noise and DLTFS measurements indicate improved properties for devices fabricated with the use of ITBL and is attributed to the relaxation of residue strain in the epitaxial layer during growth process.
URI: http://hdl.handle.net/10397/18147
ISSN: 1369-8001
DOI: 10.1016/j.mssp.2003.07.016
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