Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/18140
Title: Growth of high quality GaN thin films by MBE on intermediate-temperature buffer layers
Authors: Fong, WK
Zhu, CF
Leung, BH
Surya, C 
Issue Date: 2000
Publisher: Materials Research Soc
Source: MRS internet journal of nitride semiconductor research, 2000, v. 5 How to cite?
Journal: MRS Internet Journal of Nitride Semiconductor Research 
Abstract: We report the growth of high quality GaN epitaxial layers by rf-plasma MBE. The unique feature of our growth process is that the GaN epitaxial layers are grown on top of a double layer that consists of an intermediate-temperature buffer layer (ITBL), which is grown at 690°C and a conventional low-temperature buffer layer deposited at 500°C. It is observed that the electron mobility increases steadily with the thickness of the ITBL, which peaks at 377 cm 2V -1s -1 for an ITBL thickness of 800 nm. The PL also demonstrated systematic improvements with the thickness of the ITBL. Our analyses of the mobility and the photoluminescence characteristics demonstrate that the utilization of an ITBL in addition to the conventional low-temperature buffer layer leads to the relaxation of residual strain within the material resulting in improvement in the optoelectronic properties of the films. A maximum electron mobility of 430 cm 2y -1V -1 can be obtained using this technique and further optimizing the growth conditions for the low-temperature buffer layer.
URI: http://hdl.handle.net/10397/18140
ISSN: 1092-5783
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