Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/18128
Title: Ion-sensitive properties of organic electrochemical transistors
Authors: Lin, P
Yan, F 
Chan, HLW 
Keywords: Ion sensor
Organic electrochemical transistor
Issue Date: 2010
Publisher: American Chemical Society
Source: ACS applied materials and interfaces, 2010, v. 2, no. 6, p. 1637-1641 How to cite?
Journal: ACS applied materials and interfaces 
Abstract: Ion-sensitive properties of organic electrochemical transistors (OECT) based on Poly(3,4-ethylenedioxythiophene): poly(styrene sulfonic acid) (PEDOT:PSS) have been systematically studied for the first time. It has been found that the transfer curve (IDS-VG) of an OECT shifts to lower gate voltage horizontally with the increase of the concentration of cations, including H+, K+, Na+, Ca 2+, and Al3+, in the electrolyte. The gate electrode of the OECT plays an important role on its ion-sensitive properties. For devices with Ag/AgCl gate electrode, Nernstian relationships between the shift of the gate voltage and the concentrations of the cations have been obtained. For devices with metal gate electrodes, including Pt and Au, the ion sensitivity is higher than that given by the Nernst equation, which can be attributed to the interface between the metal gate and the electrolyte.
URI: http://hdl.handle.net/10397/18128
ISSN: 1944-8244
EISSN: 1944-8252
DOI: 10.1021/am100154e
Appears in Collections:Journal/Magazine Article

Access
View full-text via PolyU eLinks SFX Query
Show full item record

SCOPUSTM   
Citations

60
Last Week
0
Last month
0
Citations as of Aug 20, 2017

WEB OF SCIENCETM
Citations

59
Last Week
0
Last month
1
Citations as of Aug 20, 2017

Page view(s)

34
Last Week
0
Last month
Checked on Aug 21, 2017

Google ScholarTM

Check

Altmetric



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.