Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/18026
Title: Plasma-Nitrided Ga2O3(Gd2O3) as Interfacial Passivation Layer for InGaAs Metal-Oxide-Semiconductor Capacitor with HfTiON Gate Dielectric
Authors: Wang, LS
Xu, JP
Liu, L
Lu, HH
Lai, PT
Tang, WM 
Keywords: HfTiON gate-dielectric
InGaAs metal-oxide-semiconductor (MOS)
Interface-state
Nitrided Ga2O3(Gd2O3) (GGON) interlayer
Plasma-nitridation
Issue Date: 2015
Publisher: Institute of Electrical and Electronics Engineers
Source: IEEE transactions on electron devices, 2015, v. 62, no. 4, 7038221, p. 1235-1240 How to cite?
Journal: IEEE transactions on electron devices 
Abstract: Plasma nitridation is used for nitrogen incorporation in Ga2O3(Gd2O3) (GGO) as interfacial passivation layer for an InGaAs metal-oxide-semiconductor capacitor with a HfTiON gate dielectric. The nitrided GGO (GGON) on InGaAs can improve the interface quality with a low interface-state density at midgap ( 1.0 × 10-12 cm-2 eV-1, and result in good electrical properties for the device, e.g., low gate leakage current ( 8.5 × 10-6 A/cm2 at Vg = 1 V), small capacitance equivalent thickness (1.60 nm), and large equivalent dielectric constant (24.9). The mechanisms involved lie in the fact that the GGON interlayer can effectively suppress the formation of the interfacial In/Ga/As oxides and remove excess As atoms on the InGaAs surface, thus unpinning the Femi level at the GGON/InGaAs interface and improving the interface quality and electrical properties of the device.
URI: http://hdl.handle.net/10397/18026
ISSN: 0018-9383 (print)
1557-9646 (online)
DOI: 10.1109/TED.2015.2396972
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