Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/18024
Title: In-plane dielectric characterization of sol-gel derived PLZT (9/65/35) thin films using an interdigital electrode configuration
Authors: Wang, DY
Cheng, YL
Wang, J
Zhou, XY
Chan, HLW 
Choy, CL 
Issue Date: 2005
Publisher: Springer
Source: Applied physics. A, Materials science & processing, 2005, v. 81, no. 8, p. 1607-1611 How to cite?
Journal: Applied physics. A, Materials science & processing 
Abstract: Lead lanthanum zirconate titanate (PLZT 9/65/35) thin films were deposited on MgO (00l) substrates using a sol-gel method. X-ray diffraction measurements reveal that the PLZT film has epitaxially grown on the substrate and has a pure perovskite structure. Using gold interdigital electrodes the in-plane dielectric properties of the films were measured as a function of frequency (1 kHz to 10 GHz), temperature (293-435 K) and dc electric field (0-20 MV/m). The PLZT (9/65/35) thin film exhibits a diffuse phase transition, which indicates a relaxor-like ferroelectric behavior. The temperature dependence of the characteristic relaxation time was analyzed in terms of the Vögel-Fulcher relation. The relative permittivity has a high tunability of 34-42% in the frequency range of 10 MHz to 1 GHz.
URI: http://hdl.handle.net/10397/18024
ISSN: 0947-8396
EISSN: 1432-0630
DOI: 10.1007/s00339-005-3339-5
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