Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/18000
Title: Thermally grown ruthenium oxide thin films
Authors: Jelenkovic, EV
Tong, KY
Issue Date: 2004
Publisher: American Institute of Physics published on behalf of the American Vaccum Society
Source: Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2004, v. 22, no. 5, p. 2319-2325 How to cite?
Journal: Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena 
Abstract: The structural and morphological properties of the ruthenium oxide thin films were investigated using x-ray diffraction (XRD) and Raman spectroscopy, and atomic force microscopy (AFM). The films were thermally grown on oxidized silicon wafers in the temperature range from 400 to 700°C. The van der Pauw technique and metal-oxide semiconductor (MOS) structures were used to analyze the electrical properties of the sample films. The results show that the value of the work function for the sample films is 5.1 eV, and thus are suitable for application in complementary MOS n-channel and p-channel transistors.
URI: http://hdl.handle.net/10397/18000
ISSN: 1071-1023
DOI: 10.1116/1.1783319
Appears in Collections:Journal/Magazine Article

Access
View full-text via PolyU eLinks SFX Query
Show full item record

SCOPUSTM   
Citations

24
Last Week
0
Last month
0
Citations as of Aug 11, 2017

WEB OF SCIENCETM
Citations

24
Last Week
0
Last month
0
Citations as of Aug 12, 2017

Page view(s)

24
Last Week
1
Last month
Checked on Aug 13, 2017

Google ScholarTM

Check

Altmetric



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.