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Title: Unified non-volatile memory and NAND flash memory architecture in smartphones
Authors: Chen, R
Wang, Y
Hu, J
Liu, D
Shao, Z 
Guan, Y
Issue Date: 2015
Source: 20th Asia and South Pacific Design Automation Conference, ASP-DAC 2015, 2015, 7059028, p. 340-345
Abstract: I/O is becoming one of major performance bottlenecks in NAND-flash-based smartphones. Novel NVMs (nonvolatile memories), such as PCM (Phase Change Memory) and STT-RAM (Spin-Transfer Torque Random Access Memory), can provide fast read/write operations. In this paper, we propose an unified NVM/flash architecture to improve the I/O performance. A transparent scheme, vFlash (Virtualized Flash), is also proposed to manage the unified architecture. Within vFlash, inter-app technique is proposed to optimize the application performance by exploiting the historic locality of applications. Since vFlash is on the bottom of the I/O stack, the application features will be lost. Therefore, we also propose a cross-layer technique to transfer the application information from the application layer to the vFlash layer. The proposed scheme is evaluated based on a real Android platform, and the experimental results show that the read and write performance for the proposed scheme is 2.45 times and 3.37 times better than that of the stock Android 4.2 system, respectively.
Publisher: Institute of Electrical and Electronics Engineers Inc.
ISBN: 9.78E+12
DOI: 10.1109/ASPDAC.2015.7059028
Description: 2015 20th Asia and South Pacific Design Automation Conference, ASP-DAC 2015, Japan, 19-22 January 2015
Appears in Collections:Conference Paper

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