Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/17597
Title: Characterization of deep levels in Pt-GaN Schottky diodes deposited on intermediate-temperature buffer layers
Authors: Leung, BH
Chan, NH
Fong, WK
Zhu, CF
Ng, SW
Lui, HF
Tong, KY
Surya, C 
Lu, LW
Ge, WK
Keywords: Deep level transient Fourier spectroscopy (DLTFS)
Gallium nitride (GaN)
Intermediate-temperature buffer layer (ITBF)
Low-frequency noise
Issue Date: 2002
Publisher: Institute of Electrical and Electronics Engineers
Source: IEEE transactions on electron devices, 2002, v. 49, no. 2, p. 314-318 How to cite?
Journal: IEEE transactions on electron devices 
Abstract: Gallium nitride (GaN)-based Schottky junctions were fabricated by RF-plasma-assisted molecular beam epitaxy (MBE). The GaN epitaxial layers were deposited on novel double buffer layers that consist of a conventional low-temperature buffer layer (LTBL) grown at 500°C and an intermediate-temperature buffer layer (ITBL) deposited at 690°C. Low-frequency excess noise and deep level transient Fourier spectroscopy (DLTFS) were measured from the devices. The results demonstrate a significant reduction in the density of deep levels in the devices fabricated with the GaN films grown with an ITBL. Compared to the control sample, which was grown with just a conventional LTBL, a three-order-of-magnitude reduction in the deep levels 0.4 eV below the conduction band minimum (Ec) is observed in the bulk of the thin films using DLTFS measurements.
URI: http://hdl.handle.net/10397/17597
ISSN: 0018-9383
EISSN: 1557-9646
DOI: 10.1109/16.981223
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