Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/17470| Title: | Piezoelectric coefficient of InN thin films prepared by magnetron sputtering |
| Authors: | Cao, CB Chan, HLW Choy, CL |
| Keywords: | Indium nitride Magnetron sputtering Piezoelectric coefficient |
| Issue Date: | 2003 |
| Source: | Thin solid films, 2003, v. 441, no. 1-2, p. 287-291 How to cite? |
| Journal: | Thin Solid Films |
| Abstract: | Indium nitride (InN) thin films have been deposited on Si(1 0 0) and Pt(1 1 1)/Ti/SiO2/Si(1 0 0) substrates by reactive r.f. magnetron sputtering. By using a plasma power of 25 W, nitrogen gas pressure of 5-7 mTorr and substrate temperature of 300-400 °C, InN films with (0 0 0 2) orientation were obtained. The relative permittivity and electrical resistivity of the InN film were calculated from the measured electrical impedance. The piezoelectric coefficient d33 of the InN film was measured by a heterodyne interferometer and found to be 3.12 ± 0.10 pm V-1. |
| URI: | http://hdl.handle.net/10397/17470 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/S0040-6090(03)00889-7 |
| Appears in Collections: | Journal/Magazine Article |
Access
View full-text via PolyU eLinks 
SCOPUSTM
Citations
7
Last Week
0
0
Last month
0
0
Citations as of Jun 22, 2017
WEB OF SCIENCETM
Citations
6
Last Week
0
0
Last month
0
0
Citations as of May 18, 2017
Page view(s)
26
Last Week
0
0
Last month
Checked on Jun 25, 2017
Google ScholarTM
Check
Altmetric
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.