Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/17470
Title: Piezoelectric coefficient of InN thin films prepared by magnetron sputtering
Authors: Cao, CB
Chan, HLW 
Choy, CL 
Keywords: Indium nitride
Magnetron sputtering
Piezoelectric coefficient
Issue Date: 2003
Source: Thin solid films, 2003, v. 441, no. 1-2, p. 287-291 How to cite?
Journal: Thin Solid Films 
Abstract: Indium nitride (InN) thin films have been deposited on Si(1 0 0) and Pt(1 1 1)/Ti/SiO2/Si(1 0 0) substrates by reactive r.f. magnetron sputtering. By using a plasma power of 25 W, nitrogen gas pressure of 5-7 mTorr and substrate temperature of 300-400 °C, InN films with (0 0 0 2) orientation were obtained. The relative permittivity and electrical resistivity of the InN film were calculated from the measured electrical impedance. The piezoelectric coefficient d33 of the InN film was measured by a heterodyne interferometer and found to be 3.12 ± 0.10 pm V-1.
URI: http://hdl.handle.net/10397/17470
ISSN: 0040-6090
DOI: 10.1016/S0040-6090(03)00889-7
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