Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/17126
Title: Electrical properties of highly (111)-oriented lead zirconate thin films
Authors: Tang, XG
Wang, J
Wang, XX
Chan, HLW 
Keywords: Ferroelectric
Thin films
Dielectric resonance
Issue Date: 2004
Publisher: Pergamon Press
Source: Solid state communications, 2004, v. 130, no. 6, p. 373-377 How to cite?
Journal: Solid state communications 
Abstract: Antiferroelectric PbZrO3 thin films were grown on Pt/Ti/SiO 2/Si substrates with predominant (111) orientation using a sol-gel process. The Pt/PbZrO3/Pt film capacitor showed well-saturated hysteresis loops at an applied voltage of 5 V with remanent polarisation (P r) and coercive electric field (Ec) values of 8.97 μC/cm2 and 162 kV/cm, respectively. The leakage current density of the highly (111)-oriented PbZrO3 film was less than 1.0×10-7A/cm2 over electric field ranges from 0 to 105 kV/cm. The conduction current depended on the voltage polarity. The PbZrO3/Pt interface forms a Schottky barrier at electric fields from 20 to 160 kV/cm. The dielectric relaxation current behaviour of Pt/PbZrO 3/Pt capacitor obeys the well-known Curie-Von Schweidler law at electric field of 20-80 kV/cm, the currents have contributions of both dielectric relaxation current and leakage current.
URI: http://hdl.handle.net/10397/17126
ISSN: 0038-1098
EISSN: 1879-2766
DOI: 10.1016/j.ssc.2004.02.032
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