Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/17109
Title: Noise and structural properties of reactively sputtered RuO2 thin films
Authors: Jevtic, MM
Jelenkovic, EV
Tong, KY
Pang, GKH
Keywords: Low frequency noise
Raman spectra
Ruthenium dioxide
Sputtering
Issue Date: 2006
Publisher: Elsevier Science Sa
Source: Thin solid films, 2006, v. 496, no. 2, p. 214-220 How to cite?
Journal: Thin Solid Films 
Abstract: Ruthenium dioxide thin films were reactively rf sputtered on SiO 2/Si substrates and annealed in the temperature range from 150 to 500 °C. The structural and morphological properties of the films were investigated using Raman spectroscopy, transmission electron microscopy and atomic force microscopy. The increase of grain size was improved with annealing temperature. After annealing at 500 °C, the roughening of the RuO 2/SiO2 interface was observed. The electrical behaviour was analysed by resistivity, thermal coefficient of resistance and low frequency noise. Good correlation between structural and electrical properties of RuO2 films was established.
URI: http://hdl.handle.net/10397/17109
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2005.08.265
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