Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/17066
Title: Memory effect of an organic based trilayer structure with Au nanocrystals in an insulating polymer matrix
Authors: Lee, PF
Dai, JY 
Issue Date: 2010
Publisher: IOP Publishing Ltd
Source: Nanotechnology, 2010, v. 21, no. 29, 295706 How to cite?
Journal: Nanotechnology 
Abstract: The memory effects of gold (Au) nanocrystal (NC) non-volatile memory structures consisting of polyvinylpyrrolidone (PVP) K-30 polymer tunneling and control layers are investigated. The trilayer structure (PV P/Au-NCs + PV P/PV P) on p-type Si substrate was fabricated by spin coating, and transmission electron microscopy study reveals that the average size of the Au-NCs formed is about 5nm in diameter. Capacitance-voltage (C-V) measurement on the memory structure shows a counter-clockwise hysteresis loop with a significant flat band voltage shift, revealing a memory effect of the Au-NCs with a charge density of up to 1 × 1012cm- 2 and a flat band voltage shift of 2.0V. A unique feature of the double loop in the C-V curves suggests double barriers during electron tunneling. The I-V hysteresis is also characterized, and a switching mechanism of resistive change is discussed.
URI: http://hdl.handle.net/10397/17066
DOI: 10.1088/0957-4484/21/29/295706
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