Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/16996
Title: Interfacial microstructure and electrical properties of HfAlOx thin films on compressively strained Si83Ge17 grown by RF magnetron sputtering
Authors: Qiu, XY
Chan, KC
Lee, PF
Dong, XW
Dai, JY 
Keywords: HfAlOx films
Hysteresis
Interfacial microstructure
RF magnetron sputtering
Issue Date: 2009
Publisher: Elsevier
Source: Microelectronic engineering, 2009, v. 86, no. 11, p. 2247-2250 How to cite?
Journal: Microelectronic engineering 
Abstract: Interfacial microstructure and electrical properties of HfAlOx films deposited by RF magnetron sputtering on compressively strained Si83Ge17/Si substrates were investigated. HfSiOx-dominated amorphous interfacial layer (IL) embedded with crystalline HfSix nano-particles were revealed by high resolution transmission electron microscopy (HRTEM) and X-ray photoelectron spectroscopy depth profile study. About 280 mV-wide clockwise capacitance-voltage(C-V) hysteresis for the HfAlOx film deposited in Ar + N2 mixed ambient was observed. Oxygen vacancies and interfacial defects in the HfSiOx IL, as well as trapped charges in the boundaries between the HfSix nano-particles and surrounded amorphous HfSiOx may be responsible for the large C-V hysteresis.
URI: http://hdl.handle.net/10397/16996
ISSN: 0167-9317
EISSN: 1873-5568
DOI: 10.1016/j.mee.2009.03.130
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